发明名称 |
Lateral device structures using self-aligned fabrication techniques |
摘要 |
Submicron lateral device structures, such as bipolar transistors, Schottky Barrier diodes and resistors, are made using self-aligned fabrication techniques and conventional photolithography. The devices are made using individual submicron silicon protrusions which extend outwardly from and are integral with a silicon pedestal therefor. Both PNP and NPN transistors may be made by diffusing appropriate dopant material into opposing vertical walls of a protrusion so as to form the emitter and collector regions. The protrusions themselves are formed by anisotropically etching the silicon using submicron insulating studs as a mask. The studs are formed using sidewall technology where a vertical sidewall section of as layer of insulating material is residual to a reactive ion etching process employed to remove the layer of insulating material.
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申请公布号 |
US4743565(A) |
申请公布日期 |
1988.05.10 |
申请号 |
US19860837934 |
申请日期 |
1986.03.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GOTH, GEORGE R.;MALAVIYA, SHASHI D. |
分类号 |
C08G12/34;C08G12/40;H01L21/308;H01L21/762;H01L21/768;H01L29/735;H01L29/8605;H01L29/872;(IPC1-7):H01L29/56;H01L29/70 |
主分类号 |
C08G12/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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