Thyristor with switchable emitter short circuit

摘要

In thyristor having disconnectable emitter short circuits provided by means of monolithically integrated transistor structure, wherein a simplified production and improved control of the short circuits is achieved by the fact that a bipolar structure is integrated as the transistor structure into the component. In a preferred illustrative embodiment, the n+-type emitter layer of the thyristor is interrupted by intermediate spaces in which the transistor structure is in each case disposed.