| 摘要 |
PURPOSE:To eliminate the inconvenience in joining and to improve the cooling effect by interposing W, Mo close to the thermal expansion coefficient of a Si monocrystal or the metal contg. one part and joining respectively with Al foil and brazing filler metal in case of joining a Si monocrystal to the metal of low thermal expansion coefficient. CONSTITUTION:The assembly made by laminating the wafer 1 composed of the silicon monocrystal in about >=0.1mm thickness, the Al foil 2 in about 5-500mum thickness of the insert material for joining, a tungsten plate 3 in about 0.1-5mm thickness, Al-Si brazing filler metal in about 5-500mum thickness and an invar alloy 5 in about >=3mm thickness is heated under pressure to the temp. of about <=650 deg.C melting the Al foil 2 and brazing filler metal 4 and the whole body is simultaneously joined. The tungsten plate 3 has the linear expansion coefficient of about <=6X10<-6> close to room temp., giving no stress to the silicon monocrystal 1 and forming the joining face of high heat resistance and good heat conductivity. Consequently the joining is performed without the inconvenience of damaging the silicon monocrystal 1, etc., and the cooling effect can be improved.
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