| 摘要 |
PURPOSE:To easily control incident electrons under the control of a potential to be applied to an electrode for placing a sample to be etched thereby to stably etch the sample by raising the potential of the electrode higher than a plasma potential to etch the sample. CONSTITUTION:When a high frequency voltage is applied from an external electrode 2 to a reduced pressure vessel 1, a plasma is generated in the whole vessel 1. Simultaneously, a positive voltage higher than the plasma potential is applied from a power source 8 to an electrode 6. The electrode 6 is cooled to prevent it from raising the temperature of a sample 7. Since the electrode 6 is higher than the plasma potential in this state, particles charged negatively in the plasma are incident on the surface of the sample 7. Most of the incident negative particles are electrons. Neutral particles attracted to the sample 7 are dissociated by the energy to cause an etching reaction to occur thereat.
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