发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To increase the degree of margin of alignment in a joint part by forming a permalloy pattern so that it can be overlapped with an ion implantation transfer path behind a bar pattern. CONSTITUTION:The permalloy pattern 21 is formed behind a bar pattern 14 so that it can overlap the first half of the ion implantation transfer path 11 from a recessed part (cusp) 31 formed in the joint part to a next cups 32, that is, the ion implantation transfer path 11 close to the cusp 31. The permalloy pattern 12 blocks powerful resiliency arising on the tip of the par pattern 14 that affects bubbles out of the cusp 31, whereby such disadvantages are reduced that bubbles out of the cusp 31 disappear due to the resiliency. Thus the passing margin in the joint part increases and never drops even if a driving magnetic field becomes larger. Besides to that, the degree of aligning margin that the joint part between a permalloy transfer path 10 and the ion implantation transfer path 11 can accept is substantially released in order to maintain the passing margin at a high level.
申请公布号 JPS63103496(A) 申请公布日期 1988.05.09
申请号 JP19860248827 申请日期 1986.10.20
申请人 FUJITSU LTD 发明人 YONEKURA YOSHIMICHI;SATO YOSHIO
分类号 G11C19/08;G11C11/14 主分类号 G11C19/08
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