| 摘要 |
PURPOSE:To improve the reliability of a semiconductor integrated circuit device in such a way that a dense base-film containing a nitride is formed under a film such as coating glass (SOG) which easily absorbs the moisture. CONSTITUTION:A wiring part 11 composed of an aluminum film as the first layer is connected to a p<+> type semiconductor region 6 or an n<+> type semiconductor region 8 through a connecting hole 10 which is formed by selectively removing a gate insulating film 5 and an interlayer insulating film 9. An interlayer insulating film as the second layer covering the wiring part 11 is constructed by a base layer 12 composed of a silicon nitride film, an SOG film 13 and a silicon oxide film 14. The base layer 12 composed of a silicon nitride film is denser than the silicon oxide film or the like. As a result, even when the moisture is contained in the SOG film 13, the moisture does not penetrate into the insulating film 9 and the gate insulating film 5 because it is blocked by the base film 12.
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