APPARATUS FOR GROWING CDTE CRYSTAL

摘要

PURPOSE:To efficiently carry out growth of single crystal, by arranging CdTe single crystal in a stage part having a small diameter formed at a bottom part of ampoule in a growth apparatus using a Bridgeman's furnace and covering the small stage part with an insulating material having heat conductivity as low as that of CdTe. CONSTITUTION:A stage part having a smaller diameter than that of an ampoule 1 at the bottom part of the ampoule 1 is provided and a seed 9 of rod-shaped single crystal previously prepared is inserted into above-mentioned stage part and a multi-crystal ingot 30 of CdTe is put into the ampoule 1 by a prescribed pressure. Then an insulating material (e.g. mixture of Al2O3 and SiO2) 31 having heat-conductivity nearly similar to that of CdTe is formed in small diameter part of above-mentioned stage part. The insulating material 31 is formed so as to have similar diameter as outer diameter of the ampoule 1. The ampoule 1 is put in a heating furnace set in a constant temperature gradient and having a constant length to grow the single crystal of CdTe. Consequently shape of solid-liquid surface in the upper part of the seed 9 becomes convex in melt 30 side and therefore the single crystal can be grown in a stable state.