发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent a defect due to the corrosion of a wiring part or the like by forming a barrier metal film in the neighborbood of a contact hole only. CONSTITUTION:A contact hole 26 is made on an insulating film 15; contact holes 17-19, 27 are made on insulating films 15 and 16. A barrier metal film 20 such as, e.g., a TiW film is formed in the neighborhood of the contact holes. By means of this barrier metal film 20, it is possible to effectively prevent an alloying reaction of a base-extraction electrode 13 and a polycrystalline silicon resistor R with a wiring part 21 and to prevent another alloying reaction of the polycrystalline silicon resistor R with a wiring part 22. In addition, there occurs no effect of a local battery, which is caused by the phenomenon that an edge of a two-layer film composed of an aluminum wiring part and the barrier metal film is exposed to a contact hole 25a. As a result, it is possible to prevent the breakage of the wiring part 22 or the like due to the corrosion.
申请公布号 JPS63104448(A) 申请公布日期 1988.05.09
申请号 JP19860249634 申请日期 1986.10.22
申请人 HITACHI LTD 发明人 NISHIZAWA HIROTAKA;MIYAZAKI AKIHITO;SEKINE YASUSHI
分类号 H01L29/73;H01L21/331;H01L21/768;H01L29/72;H01L29/732 主分类号 H01L29/73
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