| 摘要 |
PURPOSE:To make the differential voltage of bit lines when the cell is in 'H' larger than that of bit lines when the cell is in 'L' by connecting a main and auxiliary bit lines and a dummy capacitance to lower the pre-charge level of a bit line. CONSTITUTION:At a t1, a sense amplifier is activated, a main bit line is in a level Vcc, and an auxiliary bit line is in a GND level. Meanwhile, as for the dummy capacitance CD, contacting points 1, 2 go to the GND level by the turning on of MOSFETs Q9, Q11. At a time t2, the sense amplifier is non-active but goes to a precharged status, and by the turning ON of Q8, Q10, the main and auxiliary bit lines and the dummy capacitance are connected. As a result, the precharge level of the bit line goes to lower than 1/2Vcc.
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