| 摘要 |
PURPOSE:To minimize a load viewed from the side of a remote resetting signal line R by driving a MOSFET for resetting the remote end of a word line through a depression type MOSFET whose source electrode is connected to one resetting signal line and whose drain electrode is connected to a word line. CONSTITUTION:When the potential of the resetting signal line R is transmitted to the gate electrode of the MOSFET Q1 for resetting a remote end, with a selective word line W at a high potential in operation, the Q1 is turned ON to drop the potential. If the potential difference between the potential of the word line W at a contact point N1 and that at a contact point N2 exceeds the threshold voltage of the depression type MOSFET Q2, the Q2 is turned OFF. However the Q1 is turned ON by charges accumulated at a contact point N3, and hence the potential of a remote end drops further. Since a nonselective word line is at the low level of grounding potential in operation, the potential of the resetting signal line R is transmitted to the gate electrode of the Q1 by a potential limited to the threshold voltage of the Q2. Thus the gate capacity viewed from the side of the resetting signal line R is limited only to the gate capacity of the Q1 given to the selective word line W.
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