| 摘要 |
PURPOSE:To reduce a transfer density in an epitaxial layer thereby to increase the lifetime of an epitaxial layer by adhering the epitaxial layer to an N-type silicon single crystal waver of 1.2X10<18>-2.0X10<18> atoms/cm<3> of oxygen concentration having 0.1OMEGAcm or less of resistivity. CONSTITUTION:An epitaxial layer is adhered to an N-type silicon single crystal wafer of 1.2X10<18>-2.0X10<18> atoms/cm<3> of oxygen concentration having 0.1OMEGAcm of resistivity. Since a transfer then occurs in a substrate, heavy metal (Fe, Ni, Cr, etc.,) in the layer tends to be gettered. Thus, since the transfer concentration in the layer tends to decrease, the lifetime of the layer increases.
|
