| 摘要 |
PURPOSE:To execute recording, reproducing, erasion and re-recording of a signal with high density, and also to prolong a life of a recording electrode by reducing the voltage required for recording, by forming an insulator film having a charge storage function through an insulating film on a semiconductor substrate, and also forming a specified insulating film on said film. CONSTITUTION:An information recording medium 10 is constituted by laminating a semiconductor substrate 11 of Si of n type or p type, etc., an insulator film (about 20Angstrom thickness) 12 consisting of SiO2, an Si3N4 film (scores - several hundred Angstrom ) as an insulator film 13 having a charge storage function, an SiO2 film (30-40Angstrom ) as an insulator film 14 whose band gap is larger than that of the insulator film 13, and an Si3N4 film (scores - several hundred Angstrom ) as an insulator film 15 for a wear proof protective film. On the insulator film (nitriding film) 13, the insulator film (oxide film) 14 whose band gap is larger than that of said film is provided, therefore, a current flowing into a recording electrode 17 is limited, the thickness of the insulator film 13 is thinned, and voltage required for recording can be reduced, and accordingly, a life of the electrode 17 is extended. |
