| 摘要 |
PURPOSE:To form a resistance element which has large tunneling current and a large P/V ratio by composing a resonance tunneling barrier of a GaAs barrier layer and an InAs well layer. CONSTITUTION:A resonance tunneling barrier composed of GaAs barrier layers (e.g., nondoped GaAs barrier layers 3, 5) between which an InAs well layer (e.g., nondoped InAs well layer 4) is interposed. Semiconductor layers can be extremely easily grown by a molecular beam epitaxially growing method. Since the effective mass of electrons is extremely small in the layer 3, the tunneling probability in the resonance tunneling barrier becomes large, and a large tunneling current can flow. Further, a scattering probability becomes small, the V of a P/V ratio can become small, i.e., the P/V ratio can become large. Accordingly, when a semiconductor negative resistance element provided with the barrier is used as an oscillator, a large oscillation output can be obtained. When it is used as a logic circuit, a large logic amplitude can be obtained.
|
