VERTICAL TYPE MIS FIELD EFFECT TRANSISTOR

摘要

PURPOSE:To obtain a high speed operating function as the function of a switching device by a method wherein the 3rd semiconductor region of a 2nd conductivity type is formed in the 2nd semiconductor layer from the side opposite to the side of a semiconductor substrate or a 1st semiconductor layer. CONSTITUTION:An island shape p-type semiconductor region 3 is formed in the region 4 of a semiconductor layer 2 as 2nd drain region from the side opposite to the side of a semiconductor substrate 1 as 1st drain region. The region of a conductive layer 10 as a gate electrode facing a semiconductor region 31 is removed and a window 32 is formed. It is to be noted that, practically, the semiconductor region 31 can be formed by introducing a p-type impurity into the semiconductor region 2 with the semiconductor layer 10 which has the window 32 as a mask after the window 32 is formed in the conductive layer 10 as the gate electrode at the position facing the semiconductor region 31.