| 摘要 |
PURPOSE:To control the density of plasma in a uniform state by a method wherein an electrode couple to which high frequency power is applied and a plurality of couples of magnets forming a magnetic field, which can be controlled in the direction at right angles to the electric field to be formed between said electrode couple will be formed, are provided. CONSTITUTION:An alternating magnetic field, which is intersecting at right angle with the electric field formed between electrodes 12 and 13 when power is supplied to electromagnets 19a and 19b, and 20a and 20b from an AC power sources 19 and 20, is formed and a cycloid movement is caused by electrons. As a result, the efficiency in dissociation and ionization of reactive gas molecules to the collision between the reactive gas molecule and the electrons and the speed of etching can be improved. Also, by controlling the density of plasma by changing the value of AC power to be applied from the AC power sources 19 and 20, and also by changing the intensity of magnetic field and the like, the plasma density working on the semiconductor wafer 14 can be made uniform, and the speed of etching can also be made uniform.
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