| 摘要 |
PURPOSE:To be able to single crystallize a recrystallized silicon layer directly under a gate by a self-alignment by forming a gate electrode on a polycrystalline silicon island and then recrystallizing it. CONSTITUTION:A polycrystalline silicon film 2 is formed by an LPCVD method of an SiO2 film 1 formed on a silicon substrate thereon. Then, the film 2 is separated by an insulator by a normal LOCOS method to form a polycrystalline silicon island 3 surrounded by the films 1 and 1A. Further, an SiO2 film 5A is formed by a thermally oxidizing method on the island 3, and a gate electrode 5 is formed. The electrode 5 is covered with an insulator protecting film 6. Thereafter, the island 3 is recrystallized by irradiating a laser. Since a region 4a under a gate electrode 5 of a recrystallized silicon island 4 is a part which is solidified after the recrystallization, it becomes a single crystal which does not substantially have a defect of a crystal grain boundary. |
