| 摘要 |
PURPOSE:To reduce production cost by providing plural mask areas having mask patterns different from one another on one substrate and preparing only one photomask for one kind of semiconductor. CONSTITUTION:A buried diffusion layer forming mask area 14, a separate diffusion layer forming mask area 15, a base/resistance diffusion layer forming mask area 16, an emitter/collector diffusion layer forming mask area 17, a contact window layer forming mask area 18, a wiring electrode layer forming mask area 19, and a protective film layer forming mask area 20 are arranged in parallel in plural rows on a substrate 13 consisting of a glass, a quartz, or the like to form a photomask 12. Since mask areas 14-20 for all processes are formed on one substrate 13, it is sufficient if one photomask 12 is prepared for production of one kind of semiconductor, and the production cost of masks is considerably reduced. |
