| 摘要 |
High voltage electronic contacts (S, S min ) and associated devices including TRIMOS (MOS TRlacs) devices connected in anti-parallel fashion between two terminals (S1/S min 2, S2/S min 1). Each electronic contact (S, S min ) is controlled via a control terminal (S4) by two auxiliary electronic contacts (NA, NB) each able to establish a low or high impedance between the control terminal (S4) and one of the two other terminals (S1/S min 2, S2/S min 1), the impedance conditions of these auxiliary contacts (NA, NB) being opposed. A power protection circuit associated to the TRIMOS device allows the flow of a relatively high current through the electronic contacts (S, S min ) for the lower voltage range across it, and minimizes the power dissipation in the contacts in the higher voltage range, i.e. when abnormally high signals are applied to the contact. |
