A semiconductor trench capacitor structure.

摘要

A semiconductor trench capacitor structure (240) having a self-aligned isolation structure formed within the trench. The trench isolation structure consists of a thick isolating layer (340, 360) formed along the upper portion of the trench side walls. The trench isolation structure facilitates the construction of trench capacitors of greater storage capacity in a given space and allows the capacitors to abut adjacent capacitors and other devices.