MULTILAYER OHMIC CONTACT FOR P-TYPE SEMICONDUCTOR AND METHOD FOR MAKING SAME

摘要

MULTILAYER OHMIC CONTACT FOR P-TYPE SEMICONDUCTOR AND METHOD OF MAKING SAME Novel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method for forming such novel ohmic contacts. These ohmic contacts comprise d multilayer metal contact wherein the first layer provides a lasting stable contact with the p-type semiconductor; the additional layers provide the necessary electrical conductivity for the contact to be efficient.