| 发明名称 |
Charged-particle-beam lithography |
| 摘要 |
An elongated source of charged particles is utilized in a lithographic system to form multiple focused electron (or ion) beams arranged in a linear array. The basis for an extremely high-throughput lithographic system especially suited for direct writing applications is thereby provided.
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| 申请公布号 |
US4742234(A) |
申请公布日期 |
1988.05.03 |
| 申请号 |
US19870054146 |
申请日期 |
1987.05.12 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
FELDMAN, MARTIN;LEPSELTER, MARTIN P. |
| 分类号 |
H01J37/30;H01J37/317;(IPC1-7):H01J37/26 |
主分类号 |
H01J37/30 |
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