发明名称 |
Anisotropic silicon etching in fluorinated plasma |
摘要 |
A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment the etching ambient is a mixture of either NF3 or SF6, an inert gas such as nitrogen, and a polymerizing gas such as CHF3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.
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申请公布号 |
US4741799(A) |
申请公布日期 |
1988.05.03 |
申请号 |
US19860931909 |
申请日期 |
1986.11.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN, LEE;MATHAD, GANGADHARA S. |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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