Method of making graded junction containing amorphous semiconductor device

摘要

This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.