| 摘要 |
PCT No. PCT/JP85/00152 Sec. 371 Date Sep. 30, 1985 Sec. 102(e) Date Sep. 30, 1985 PCT Filed Mar. 28, 1985 PCT Pub. No. WO85/04531 PCT Pub. Date Oct. 10, 1985.A junction-type semiconductor light emitting device comprising a plate portion, a column formed on one surface of the plate portion and electrodes provided on each of opposite surfaces of the plate portion including the column wall, the column having a pn junction formed therein and extending perpendicular to the plate portion, the plate portion having a pn junction formed therein and extending in parallel with the plate portion, these pn junctions being connected with each other, the current density through the pn junction in the column being larger than that through the pn junction in the plate portion under the application of a predetermined voltage across the electrodes, so as to facilitate the continuous oscillation of this light emitting device at room temperature with the resultant light emission through the column. The light emitting device can be readily arranged in matrix and readily integrated in high degree. Various kinds of sophisticated optical functions can be realized by accumulating a photodetector, a saturable light absorbing layer and the like thereon in the direction of thickness.
|
