| 摘要 |
A semiconductor component, including a GTO thyristor and integrally formed reverse conducting antiparallel diode, which can be used for turn-off of currents of 20 A . . . >2,000 A and off-state voltages of 600 V . . . >4,500 V in power electronics for driving electric vehicle motors, for direct-current choppers, converters, electric filters and so forth. A thyristor region including several parallel-connected individual gate turn-off (GTO) thyristors is separated by a protective zone form a diode region and electrically substantially decoupled in such a manner that only a few free charge carriers can reach the thyristor region during the conducting phase of the diode. For this purpose, the distance between the bottom of the recess in the protective zone and a space charge zone is kept small. Preferably, a second pn junction in the region of the protective zone extends to the bottom of the protective zone at two points. At the anode side, several protective rings can be provided to facilitate the turning off of the GTO thyristor.
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