MANUFACTURE OF X-RAY EXPOSING MASK

摘要

PURPOSE:To manufacture a specified mask pattern in accurate height by a method wherein a semiconductor substrate is provided with vertically recessed grooves to be filled with X-ray absorbing members for manufacturing a mask pattern. CONSTITUTION:An SiO2 film 2 is provided around the ground surface of an Si wafer 1 to be vertically irradiated with Ga ion beams in pressure-reduced Cl2 gas forming vertical grooves e.g. in width of 0.3 mum and depth of 0.5 mum. After coating the Si surface with Au 4 in depth of around 0.6 mum and spin- coating with a photoresist 5, the Si surface is etched back by obliquely irradiating it with Ar ion at an angle of around 60 deg.C to be exposed. Next, polyimide films 4 as mask base material are deposited on the surface of Si wafer 1 and then the back surface of wafer 1 is etched from the bottom side using mixed solution of HF+HNO3 to expose the Au (X-ray absorbing members) 4. In such a constitution, a vertical mask pattern in accurate height can be manufactured.