| 摘要 |
PURPOSE:To enhance use efficiency of a target in a sputtering device by making the target to a cylindrical shape and generating lines of magnetic force in the direction parallel to the diameter thereof and also rotating the target around it axis. CONSTITUTION:Gaseous Ar is introduced into the vacuum vessel 1 of a sputtering device through an inlet 2 and discharged through an outlet 3. A target 4 which consists of Al, Cu, Mo, W, Ti and Si, etc., and is opened in both ends and is cylindrical in the inner surface is arranged in the vacuum vessel 1 and a magnet 5 is arranged to the outside thereof. The target 4 is made to a cathode and electrodes 8 which are a counter electrode thereof and are fitted with base plates 7 to be vapor-deposited are provided to both sides of the target 4. The target 4 is made to negative voltage of minus thousands volt from -500V, also lines 6 of magnetic force are generated in the diametrical direction of the cylindrical target with the magnet 5, plasma is trapped in the inside of the cylindrical target while rotating the target 4, and the target material is formed on the base plates 7 as a coated film good in coating of the difference in level without damaging the base plates 7 by plasma.
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