| 摘要 |
PURPOSE:To manufacture the tile impurity doped ZnSe compound semiconductor by a method wherein the materials of Zn source and Se source are decomposed by free electrons or H radical in H plasma while the material of impurity is thermally decomposed when led in to be chemical reacted on a substrate encircled by H radical out of plasma region. CONSTITUTION:H2 and Se(C2H5)2 mixed with H2, H2 and Zn(C2H5)2 mixed with H2 and Al(C2H5)2 are led to a chamber 8 respectively from tubes 11, 10 and 13 keeping the chamber 8 at a specified vacuum degree to extend plasma to a region 14 by a mu wave oscillator 2. Se(C2H5)2, Zn(C2H5)2 producing reaction active species from plasma are fed to a glass substrate on a holder 9 in an H radical region outside the plasma region while Al(C2H5)2 is heated by a heater 12 to feed any decomposed derivative to the holder 9 so that impurity doped ZnSe thin film may be deposited on the glass substrate at around 230 deg.C. Through these procedures, the reaction active species and the decomposition derivative are fed to the substrate without advanced reaction so that impurity atoms may be heated up to pertinent lattice point of ZnSe by chemical potential of ambient H radical to manufacture an excellent semiconductor. |
