| 摘要 |
PURPOSE:To obtain the fundamental structure of a very high speed LSI using a tunnel Tr by forming a gate insulating film from an insulating film region in different thickness and constituting a second insulating film so that tunnel currents are caused to flow toward the surface of a substrate. CONSTITUTION:An n-type poly Si gate electrode 1 is shaped onto the surface of a p-type Si substrate 5 through SiO2, and the width of the gate electrode 1 is brought to 0.2mum. A source 3 and a drain 4 as n-type impurity regions are formed to the gate electrode 1 in a self-alignment manner, and the depth of junctions among the gate electrode and the source and the drain is brought to 0.1mum. The thickness of SiO2 existing in the surface of the substrate is brought to 100nm in a region in 0.01mum at a central section between source-drain and the thickness of other sections is brought to 10nm. No punch-through is generated because there exists SiO2 comparatively deeply at the central section, and an avalanche phenomenon at a drain end is inhibited owing to the presence of SiO2, thus acquiring a three-terminal device having high reliability though a channel is extremely short. |
