| 摘要 |
PURPOSE:To improve adhesion with a heat sink by applying a resist onto the whole surface of a chip, selectively leaving the resist only in a recessed section through the exposure of the whole surface and etching the surface of the chip, using the resist as a mask. CONSTITUTION:A DH epitaxial layer 2 and a contact layer 3 are formed onto a GaAs substrate 1. When a resist 11 is applied onto the whole surface on the contact layer 3 with a groove 10 and the whole surface is exposed, the resist 12 not exposed is left onto the groove 10, and the groove 10 is masked selectively. The contact layer 3 is etched through etching, employing the resist 12 as a mask, the depth of the groove 10 is shallowed relatively, and a flattened contact layer 13 is acquired. When a chip with the layer 13 is mounted through junction down, the surface of the chip is fast stuck completely onto a heat sink 7, thus efficiently dissipating heat generated near a groove 9 in the chip in the DH epitaxial layer 2.
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