| 摘要 |
PURPOSE:To scale down cell size and chip size by forming a transfer transistor (TR) in a static memory cell and a driver TR in the same gate width. CONSTITUTION:A gate electrode 2 is shaped to a gate section for a transfer TR in a static memory cell, X-rays and ultraviolet rays are projected and an interface level is increased, and mobility is reduced to one third. Or the thickness of a gate oxide film in the transfer TR is trebled to a driver TR. The surface impurity concentration of the transfer TR is augmented, and ON currents of the TR is reduced to one third. Or these methods are combined, and the size of the driver TR and the transfer TR is equalized. |
