| 摘要 |
PURPOSE:To prevent the deterioration of junction characteristics by forming a tunnel junction, in which a high-concentration doped n<++> type layer and a high-concentration doped p<++>-type layer consisting of the same compound semiconductor as an n-type compound semiconductor single crystal substrate are laminated in succession, between the substrate and a compound semiconductor thin-film. CONSTITUTION:An n-GaAs buffer layer 8 is laminated onto an n-type GaAs substrate 9. An n<++>-GaAs layer 7 and a p<++>-GaAs layer 6 are laminated successively onto the layer 8, thus shaping a p<++>-n<++> tunnel junction layer. A p-GaAs layer 5 and an n<+>-GaAs layer 4 are laminated onto the tunnel junction layer in succession, thus forming an n-p junction layer. An n<+>-Al0.6Ga0.4As window layer 3 and an n<+>-GaAs ohmic contact layer 2 are laminated successively, and surface electrodes 1 are shaped. A back electrode 10 is formed onto the lower surface of the substrate 9. Accordingly, the deterioration of junction characteristics is prevented, thus manufacturing a semiconductor element such as a solar cell being excellent in both photoelectric conversion efficiency and radiation resistance. |
