| 摘要 |
PURPOSE:To implement miniaturization and high integration density, by forming the source-region diffused layer of an MOS transistor by thermal diffusion of one-conductivity type impurities from first polysilicide, and forming a contact- part diffused layer on the side of a substrate by thermal diffusion of reverse- conductivity type impurities from second polysilicide. CONSTITUTION:A gate electrode 4 of each MOS transistor is formed in a required pattern with polysilicide, in which N ions are doped. At this time, parts of the gate electrodes are formed as first polysilicide parts 8 on both sides of the source region of a neighboring MOS transistor. Second polysilicide 9, in which P ions are doped, is formed on the first polysilicide parts 8 and therebetween. With the gate electrodes 4 and the first and second polysilicide parts 8 and 9 as masks, N ions are implanted, and source and drain regions 5 are formed. Then heat treatment is performed for the first and second polysilicide parts 8 and 9. N ions from the first polysilicide parts 8 and P ions from the second polysilicide part 9 are thermally diffused into a P-type well 2, and a source-region diffused layer 5a and a contact-part diffused layer 6 are formed. |
