| 摘要 |
PURPOSE:To reduce the reactive current by providing a semiconductor clad layer, a semiconductor active layer and a semiconductor clad layer in a strip- form groove which penetrates through a plurality of AlInAs semiconductor layers and InP semiconductor layers arranged on an InP substrate. CONSTITUTION:On an N type InP substrate 11 in which (100) plane is a main plane, an N type InP layer 12, an AlInAs layer 13, and P type InP layer 14, an AlInAs layer 15 and a P type InP layer 16 are grown in the above order. Next, the groove 17 is formed in a direction of <011> of the crystal by photolithography and chemical etching. The groove 17 is a V-shaped groove exposing (111)B plane. In the groove 17, an N type InP clad layer 18, an N type InGaAsP active layer 19, a P type clad layer 20 and a P type InGaAsP cap layer 21 are grown in the above order. At this time, an N type InP layer 18' and an N type InGaAsP layer 19' are grown on the layer 16 outside the groove 17. Subsequently, a protective insulating film 22 and electrodes 23 and 24 are formed. Thus the device in which the reactive current is reduced can be obtained. |
