| 摘要 |
PURPOSE:To test electrically the monitoring patterns before the functional test of the IC is carried out and to monitor securely the generation of defective semiconductor device by a method wherein the monitoring patterns corresponding to the masks to be used for forming each layer of the semiconductor device are formed in advance. CONSTITUTION:Monitoring patterns 12, 13, 14, 15, 16, 17, 18, 19 and 20 consisting of patterns to be formed in the processes to use the masks for forming each layer of the device are formed on parts of the chip. In these patterns, when these exists a defect in some one of the masks, the pattern to be formed using the mask ought to become a non-conduction if being conducted when the mask is in a normal state. Accordingly, after the wafer process ends, test needles are brought into contact with test electrode pads 11 and 11 and when the test needles are a non-conduction, it is confirmed that the defective mask was used. |
