| 摘要 |
PURPOSE:To form a CVD film having excellent film-thickness uniformity by mounting a transport path for gases in which an introducing port for single or a plurality of raw material gases are arranged on the back side of one electrode in electrodes opposed to each other and a large number of leading-out holes for reaction gases onto the main surface of the other electrode oppositely faces to each other. CONSTITUTION:In a gas ionization space 1 in which one electrode 2 on which a film forming substrate 4 is fitted and an electrode 12 opposed to the electrode 2 shaping electrostatic capacitance with the electrode 2 are disposed, an introducing port 9 for raw material gases or reaction gases is mounted on the back side of the electrode 2. A reaction source gas fed from the introducing port 9 mainly flows through a transport path flowing out to the exhaust port 7 side of a bell jar device by controlling gas pressure and a gas flow valve, but one part of the raw material gases flows out through a large number of gas leading-out holes 14 bored to the main surface 13 of the other electrode side 12 at regular intervals. Reaction gas seeds in the gas ionization space between the electrodes by the application of high-frequency voltage generates a concentration gradient as film deposition to the substrate progresses in the space, a diffusion by the concentration gradient is conducted toward the ionization space 1, and gas seeds required for deposition on the substrate are fed. Accordingly, a film having the excellent quality of the film can be formed on the substrate having a large area in uniform film thickness. |
