发明名称 Conductive sintered body of silicon nitride and process for the production thereof
摘要 A conductive sialon sintered body can be obtained from silicon nitride, from 6 to 25% by weight of sintering aid, based on the silicon nitride, and from more than 30% by volume to less than 70% by volume of titanium nitride, based on the total amount of silicon nitride and sintering aid. The sintering aids essentially consist of from 3 to 10% by weight of Y2O3, from 2 to 7% by weight of AlN or AlN of the polytype and from 1 to 8% by weight of Al2O3, based on Si3N4. This conductive sialon sintered body is obtained by sintering the corresponding green shaped body in a nitrogen atmosphere at from 1600 to 1900 DEG C at 300 bar or less, preferably under atmospheric pressure.
申请公布号 DE3614141(A1) 申请公布日期 1988.04.28
申请号 DE19863614141 申请日期 1986.04.25
申请人 HITACHI METALS,LTD. 发明人 KUBO,YUTAKA;MARUTA,KENJI;HARA,HISAO;TOBISE,MASAHIRO
分类号 C04B35/584;C04B35/593;C04B35/597;(IPC1-7):C04B35/58;C04B35/64 主分类号 C04B35/584
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