| 摘要 |
PURPOSE:To deposit low resistant metal by means of CVD by a method wherein metal is furnished to only an Si aperture section by optical CVD adhereing with an easily etched material on SiO2 using H2 base metal fluoride gas, and after the gas is changed over to organic metal gas or IV group elemental hydrogen compound, the metal fluoride gas is used again. CONSTITUTION:PSG 15 is deposited on a thermal oxide film 14 of an Si substrate 13 and RIE is performed to make an aperture. Sample housed in 10<-7>Pa container is heated at 300 deg.C and prescribed quantity of WF2 in consequence to H2 is introduced thereto, ArF laser pulse with prescribed intensity is projected in parallel to the sample surface W 16 is deposited only to an Si exposure section and the PSG 15 is removed. The container is evacuated again, only W(CO)6 is introduced, W 16 is scanned vertically by converged Ar laser light, W 17 containing C is deposited and evacuated again, H2+WF6 is introduced, and then W 18 is adhered only on the W 16, 17 by projection of the ArF laser. By this constitution, filling of high m.p. metal to the Si substrate can be performed at low temp. and easily, also connection with a metallic wiring can be performed flatly. |
