| 摘要 |
PURPOSE:To prevent the latch up phenomenon by a method wherein a barrier layer is formed by separaring a PN junction section between a P-type epitaxial layer and an N-type semiconductor with an nitride layer and an N<+> diffusion layer. CONSTITUTION:A thermal oxidation film 2 is grown on an N-type semiconductor substrate 1 and is patterned to be etched. Then, a hole opening section is formed on the N-type substrate 1, and a nitride film 4 is grown on it as an insulating film. The nitride film 4 is partially etched, and a p-type epitaxial layer 5 is grown in the hole opening section. Then, the thermal oxide film 2 and the nitride film 4 are removed by wet etching. However, the nitride film 4 within the N-type semiconductor substrate 1 remains without being etched so as to act as a favorable element separation film. With such manufacture method, the process for well diffusion is dispensed with, providing a low cost, more integrated semiconductor device without malfunction such as latch up. |
