发明名称 Method for depositing a ternary compound having a compositional profile
摘要 Thermal sources of Te and of Hg are provided in a vacuum chamber to furnish constant effusion of Te and Hg. Laser radiation is used to evaporate a beam of CdTe from a target of CdTe in the chamber. The laser radiation is modulated to vary the beam intensity of CdTe and thereby deposit a controlled compositional profile of Hg(1-x)CdxTe on a substrate located in the chamber.
申请公布号 US4740386(A) 申请公布日期 1988.04.26
申请号 US19870031733 申请日期 1987.03.30
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 CHEUNG, JEFFREY T.
分类号 C23C14/28;H01L31/18;(IPC1-7):B05D3/06;B05D5/12;H01L31/00 主分类号 C23C14/28
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