发明名称 |
ETCHING TECHNIQUES |
摘要 |
<p>A highly selective --greater than 100 to 1-- etch for silicon, tantalum, molybdenum and tungsten and non-oxidic tantalum, molybdenum and tungsten compositions such as tantalum silicide and tantalum nitride, molybdenum silicide and tungsten silicide,relative to their oxidic counterparts and silicon nitride is achieved by using polyatomic halogen fluorides. The selectivity (3) which is greater than 100 to 1 for silicon, tantalum and non-oxidic tantalum, is achievable without employing plasmas or wet etching.</p> |
申请公布号 |
CA1235630(A) |
申请公布日期 |
1988.04.26 |
申请号 |
CA19840457419 |
申请日期 |
1984.06.26 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
COOK, JOEL M.;DONNELLY, VINCENT M.;FLAMM, DANIEL L.;IBBOTSON, DALE E.;MUCHA, JOHN A. |
分类号 |
H01L21/302;C04B41/53;C09K13/08;C23C16/44;C23F1/12;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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