发明名称 |
PRODUCTION OF HARD BORON NITRIDE FILM |
摘要 |
PURPOSE:To easily form a hard boron nitride film having high purity on a substrate with a simple apparatus, by evaporating boron (compound) powder with arc discharge and reacting the produced boron-containing gas with a nitrogen-containing gas on a substrate plate. CONSTITUTION:A water-cooled crucible 2 acting as an electrode is placed at the bottom of a vacuum vessel 1 and boron powder or a boron compound 3 (e.g. boric acid) is put into the crucible 2. Another electrode 4 is placed close to and above the crucible 2. The vacuum vessel 1 is evacuated with a pump 14, a nitrogen-introducing pipe 5 is imposed with DC voltage and nitrogen gas converted to plasma is introduced into the vacuum vessel 1. At the same time, the switch 10 is turned on to generate an arc discharge between the water-cooled crucible 2 and the electrode 4 to evaporate the boron raw material 3. The produced boron-containing gas is made to react with the nitrogen gas plasma on the heated substrate plate 7 to deposit a hard boron nitride film on the substrate plate 7. |
申请公布号 |
JPS6395200(A) |
申请公布日期 |
1988.04.26 |
申请号 |
JP19860240229 |
申请日期 |
1986.10.09 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
TOBIOKA MASAAKI;IKEGAYA AKIHIKO;FUKUSHIMA KAZUHIKO |
分类号 |
C30B29/38;C23C14/06;C23C14/34;C23C16/34;C23C16/50;C30B23/02;C30B25/02 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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