发明名称 PRODUCTION OF HARD BORON NITRIDE FILM
摘要 PURPOSE:To easily form a hard boron nitride film having high purity on a substrate with a simple apparatus, by evaporating boron (compound) powder with arc discharge and reacting the produced boron-containing gas with a nitrogen-containing gas on a substrate plate. CONSTITUTION:A water-cooled crucible 2 acting as an electrode is placed at the bottom of a vacuum vessel 1 and boron powder or a boron compound 3 (e.g. boric acid) is put into the crucible 2. Another electrode 4 is placed close to and above the crucible 2. The vacuum vessel 1 is evacuated with a pump 14, a nitrogen-introducing pipe 5 is imposed with DC voltage and nitrogen gas converted to plasma is introduced into the vacuum vessel 1. At the same time, the switch 10 is turned on to generate an arc discharge between the water-cooled crucible 2 and the electrode 4 to evaporate the boron raw material 3. The produced boron-containing gas is made to react with the nitrogen gas plasma on the heated substrate plate 7 to deposit a hard boron nitride film on the substrate plate 7.
申请公布号 JPS6395200(A) 申请公布日期 1988.04.26
申请号 JP19860240229 申请日期 1986.10.09
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TOBIOKA MASAAKI;IKEGAYA AKIHIKO;FUKUSHIMA KAZUHIKO
分类号 C30B29/38;C23C14/06;C23C14/34;C23C16/34;C23C16/50;C30B23/02;C30B25/02 主分类号 C30B29/38
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