| 摘要 |
PURPOSE:To inhibit the corrosion (oxidation) of a first P-type AlxGa1-xAs layer by selectively forming a second layer having an Al composition ratio (x) smaller than the first P-type AlxGa1-xAs layer having a large Al composition ratio (x) onto the surface of the first P-type AlxGa1-xAs layer and shaping a first metallic electrode onto the surface of the second layer. CONSTITUTION:A resist is applied onto an antireflection film 5, opening sections are formed selectively through patterning, and the antireflection films correspond ing to the opening sections are removed to expose p-type AlGaAs growth layers 4 lower sections. A residual resist material is gotten rid of, the whole is inserted into a MOCVD furnace, and p-type AlGaAs growth layers 10, an Al composition ratio (x) of which is made lower within a range of 0.5-0.8 than the AlGaAs growth layers 4, are shaped onto the exposed surfaces of the AlGaAs growth layers by a reaction formula mentioned below. (CH3)3Al+(CH3)3Ga+ AsH3 AlGaAs+3CH4 Metallic films are formed onto the surfaces of the p-type AlGaAs growth layers 10, and first metallic electrodes 6, 7 are shaped through selective patterning. |
