| 摘要 |
PURPOSE:To decrease the turn-off time of an IGBT (Insulated Gate Bipolar Mode Transistor) by leading out a base of an internal transistor (TR) of an IGBT to the outside and short-circuiting or reverse-biasing the base-emitter of the internal TR. CONSTITUTION:The IGBT 1 is turned on or off based on a command of an on/off command device 2. In such a case, when an off command is issued from the command device 2, the signal is inverted by an inverter gate 6 and supplied to a signal transmitter 5. The TR 3 is turned on by the signal transmitter 5, resulting that the base-emitter of the internal TR 1a of the ICBr 1 is reverse- biased by the power supply 4. Thus, the base-emitter is short-circuited or reverse-biased in the internal TR when the IGBT 1 is turned off in such a way, the carrier reduction is quickened to reduce the turn-off time. |
