| 摘要 |
PURPOSE:To introduce generated beams to the outside efficiently by forming the central sections of a clad layer, an active layer and a contact layer in multiple quantum well structure and shaping side sections except the central sections in a disordered region. CONSTITUTION:Currents flowing into a device flow only through a current path 7, a region not disordered (a central section 17, an n-type MQW clad layer 13 and an n-type InP substrate 1), by the difference of diffusion potential. Electrons injected from an n-side electrode 4 and holes from a region in which there is no SiO2 insulating film 2 between a p-side electrode 3 and a p-type MQW contact layer 11 are recombined in an active region 12 and converted into beams. Since the disordered MQW layer has a refractive index smaller than an original MQW layer, beams generated in the active region 12 are confined only in the region not disordered, and are not propagated in the cross direction of the device, thus efficiently introducing beams to the outside. |
