发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To prevent the increase in power consumption due to a through-current by connecting a current interrupting FET in series between a load FET and a drive FET. CONSTITUTION:The FET 10 receiving a signal in opposite phase to that of an INBT signal controlling a transmission gate to interrupt throughcurrent is connected in series between the FETs 3 and 4. An INST signal (b) goes to R in the timing t3 of a clock signal (a) and a transmission gate is turned on. ln this case, a signal (c) (inverse Of INST signal) in opposite phase to the INST signal goes to L and the FET 1D is turned on. In the timing when the transmission gate is turned off and no data is transferred, the inverse of INST signal goes to H and the FET 10 is turned off, then through-current from a positive terminal T1 to a ground terminal is interrupted.
申请公布号 JPS6395731(A) 申请公布日期 1988.04.26
申请号 JP19860241667 申请日期 1986.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 AZEKAWA YOSHIIKU;HARADA TAKASHI
分类号 H03K19/0944;H03K19/00 主分类号 H03K19/0944
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