| 摘要 |
PURPOSE:To shorten the turn-off time by leading out a base section in an inter nal transistor [PNP (NPN) transistor in N(P) channel IGBT] for the IGBT to the outside. CONSTITUTION:The leading-out of a base electrode 10 through an insulating layer 9 constitutes a characteristic feature of the title transistor. The leading-out corresponds to the leading out of a base section in an NPN transistor. When an emitter (a collector in IGBT) and the base electrode 10 in an internal transis tor is short-circuited or reverse-biassed on the turn-OFF of the IGBT, the quenching of carriers is accelerated, thus making the turn-OFF time of the transistor shorter than conventional devices. The N channel IGBT is described as mentioned above, but the same applies to a P-channel IGBT. |
