| 摘要 |
An active element behaving as a negative resistor is situated in parallel with a varactor to cancel the varactor losses. DC bias is provided for the active element and for the varactor which are separated by a DC block. The entire circuit can be fabricated on a single, relatively small chip. A Gunn diode may be used as the active element if the circuit is formed on a silicon substrate. A field effect transistor may be used as the active element on a gallium arsenide substrate.
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