| 摘要 |
PURPOSE:To obtain an optical output equivalent to the superposition of two or more of end-surface light-emitting devices, and to acquire an end-surface light-emitting device having a high output by forming a light-emitting region to two steps or more of a stepped shape. CONSTITUTION:An optical guide layer is formed onto an InP substrate 11 through crystal growth, the hemihedry of the optical guide layer as a rear section to an optical extracting surface is removed through etching, the optical guide layer 19 constituting a stepped section 9 is shaped, and stepped sections are formed onto the substrate 11. An n-type InP clad layer 12, p-type InGaAsP active layers 13, 14, a p-type InP clad layer 15 and a cap layer 16 are shaped onto the stepped sections through crystal growth, and a light-emitting region, to upper and lower sections of which stepped sections are formed, is shaped. In the element, an optical output 21 in the active layer 14 in the stepped section 10 is taken out through the optical guide layer 19, and an optical output 20 in the active layer 13 in the stepped section 9 is led out of, the lower section of the light-emitting region. |
