| 摘要 |
PURPOSE:To inhibit the corrosion (oxidation) of a p-type AlGaAs layer by forming a p<+> type GaAs layer onto a p-type diffusion layer having low resistivity and shaping a first metallic electrode onto the surface of the p<+> type GaAs layer. CONSTITUTION:A resist is applied onto an antireflection film 5, opening sections are formed selectively through patterning, the antireflection films corresponding to the opening sections and p-type AlGaAs growth layers 4 as the lower sections of the antireflection films are removed continuously, and a p-type diffusion layer 3 on the lower side is exposed. A residual resist material is gotten rid of, the whole is inserted into a MOCVD furnace, and p<+> type GaAs growth layers 10 are shaped onto the exposed surfaces of the p-type diffusion layers by a reaction formula mentioned below. (C2H5)2Zn+(CH3)3Ga+AsH3 GaAs+3 CH4 Metallic films are formed onto the surfaces of the growth layers 10, and first metallic electrodes 6, 7 are shaped through patterning. |
